(Hong Kong)
Product Summary
The MMBF170 is a n-channel enhancement mode field effect transistor.
Parametrics
MMBF170 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 60 V; (2)Drain-Gate Voltage RGS ≤1.0MΩ, VDGR: 60 V; (3)Gate-Source Voltage, VGSS: ±20V Continuous; ±40 V Pulsed; (4)Drain Current, ID: 500mA Continuous; 800 mA Pulsed; (5)Total Power Dissipation, Pd: 300mW; 1.80 mW/℃; (6)Thermal Resistance, Junction to Ambient, RθJA: 417 K/W; (7)Operating and Storage Temperature Range Tj, TSTG: -55 to +150℃.
Features
MMBF170 features: (1)Low On-Resistance; (2)Low Gate Threshold Voltage; (3)Low Input Capacitance; (4)Fast Switching Speed; (5)Low Input/Output Leakage.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MMBF170LT3G |
ON Semiconductor |
MOSFET 20V 500mA N-Channel |
Data Sheet |
Negotiable |
|
||||||||||||
|
MMBF170LT3 |
ON Semiconductor |
MOSFET 20V 500mA N-Channel |
Data Sheet |
Negotiable |
|
||||||||||||
|
MMBF170LT1G |
ON Semiconductor |
MOSFET 60V 500mA N-Channel |
Data Sheet |
|
|
||||||||||||
 |
MMBF170LT1_1246623 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
MMBF170LT1 |
ON Semiconductor |
MOSFET 20V 500mA N-Channel |
Data Sheet |
Negotiable |
|
||||||||||||
|
MMBF170-7-F |
Diodes Inc. |
MOSFET 60V 225mW |
Data Sheet |
|
|
||||||||||||
|
MMBF170-7 |
Diodes Inc. |
MOSFET 60V 225mW |
Data Sheet |
Negotiable |
|
||||||||||||
|
MMBF170_Q |
Fairchild Semiconductor |
MOSFET N-Ch Enhance |
Data Sheet |
Negotiable |
|
||||||||||||
